DESIGN OF SENSITIVE ELEMENT OF PRESSURE CONVERTER BASED ON SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2013 - IPC H01L29/84 G01L7/08 

FIELD: electricity.

SUBSTANCE: sensitive element of a pressure converter on a silicon-on-insulator structure contains a base from single-crystal silicon, the first insulating layer with a window in it, a layer of elastic material, the second insulating layer, at least one resistance strain gauge and contacts to a resistance strain gauge. The window in the first insulating layer along the entire perimetre is surrounded with the first insulating layer. The layer of the elastic material is arranged on the first insulating layer and closes the window in the first insulating layer along its entire perimetre. The base, the first insulating layer and the layer of elastic material in the place of window location form a tight chamber. The resistance strain gauge is partially arranged between the first insulating layer and the layer of the elastic material, partially on the surface of the elastic material layer above the window. The second insulating layer separates the resistance strain gauge and the layer of the elastic material. The resistance strain gauge is arranged from a single-crystal silicon. On the part of the resistance strain gauge arranged on the surface of the elastic material layer above the window and not coated with the second insulating layer, there is the third insulating layer, the thickness of which makes not more than 0.2 and at least 0.01 of the resistance strain gauge thickness.

EFFECT: higher sensitivity of a sensitive element to pressure and higher reproducibility of an initial output signal of a sensitive element.

5 cl, 6 dwg