SEMICONDUCTOR DEFORMATION CONVERTER AND PROCESS OF ITS MANUFACTURE Russian patent published in 2003 - IPC

FIELD: measurement technology, design and manufacture of small-size high-sensitivity semiconductor deformation converters. SUBSTANCE: proposed semiconductor deformation converter includes film resistor strain gauge with positive temperature coefficient of resistance linked to flexible dielectric base. Resistor strain gauge is made of layer of monocrystalline silicon with thickness of 2.0-5.0 mcm doped with boron. Temperature- sensitive resistor with negative temperature coefficient of resistance made of layer of polycrystalline silicon doped with boron is additionally linked to resistor strain gauge. There is also proposed process of manufacture of semiconductor deformation converter. As result tensometric sensitivity of semiconductor deformation converter is raised in comparison with foil converters. Group method of manufacture of converter and formation of reproducible parameters of converter are ensured. EFFECT: expanded functional capabilities in measurement of temperature and temperature compensation for resistance of resistor strain gauge. 3 cl, 8 dwg