FIELD: metallurgy.
SUBSTANCE: device has reaction region separated from drift region by electrostatic gate. Doping material is fed into reaction region from doping circuit while drift region is not alloyed. Two ion modifiers to create strong field are arranged in drift region, one after another. One modifier to remove alloying adducts from ions or both modifiers may be used to subject ions to fragmentation.
EFFECT: extra data on origin of analysed matter to distinguish it from impurities.
8 cl, 1 dwg
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