DIFFUSION OF PHOSPHORUS FROM PHOSPHORUS NITRIDE (PN) Russian patent published in 2014 - IPC H01L21/225 

FIELD: physics.

SUBSTANCE: phosphorus diffusion method includes forming phosphosilicate glass on the surface of a silicon wafer. The diffusion source used is phosphorus nitride. The process is carried out at the following gas flow rates: O₂=70 l/h, nitrogen N₂=700 l/h, at temperature of 1020°C and the process is carried out for 30 minutes. The process is monitored by measuring surface resistance (R_S). The surface resistance R_S=155±5 ohm/cm.

EFFECT: obtaining uniform surface concentration on the entire surface of a silicon wafer and short process.