FIELD: process engineering.
SUBSTANCE: invention relates to chemical machine building, particularly, to plasma chemical reactors, and may be used in making fine materials. Reactor comprises reaction chamber and channel to feed plasma heat carrier into chamber top section, said heat carrier being generated in plasmatron. Heat carrier inlet channel bottom is composed of taper nozzle, taper angle varying from 8 to 12 degrees. Nozzle diverging at 8 to 12 degrees at reaction chamber top section makes Laval nozzle. Note here that taper nozzle length is defined by relationship L=(D-d)/tg(α/2), while diverging nozzle length is selected subject to relationship L1=(D1-d)/tg(β/2), where L is taper nozzle length, L1 is diverging nozzle length, D is diameter of taper nozzle inlet cross-section, D1 is diameter of diverging nozzle outlet cross-section, d is diameter of Laval nozzle throat, α is taper angle of taper nozzle, β is taper angle of diverging nozzle. Atomisers open into diverging nozzle. Note here that intersection of atomisers axes with reaction chamber vertical axis is located in diverging nozzle and from Laval nozzle throat at the distance not exceeding the diameter of said section.
EFFECT: intensified mixing.
1 dwg
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Authors
Dates
2013-02-27—Published
2011-08-03—Filed