FIELD: process engineering.
SUBSTANCE: invention may be used in solid-state engineering in making n-type conductivity materials. Reaction system of graphite and phosphorus is sintered in hydrogen flow at 200-280°c. Then diamond is synthesized at 1450-1650°C and 6.3-7.5 GPa limited at 6.3 GPa by the range of 1550-1650°C and, at 7.5 GPa, by the range of 1450-1550°C for, at least, 40 hours. In compliance with second version, diamond is drown at seed faces {11} and {100} at 1400-1600°C and 6.3-7.5 GPa limited at 6.3 GPa by the range of 1500-1600°C and, at 7.5 GPa, by the range of 1400-1500°C at, at least, 40-60 hours.
EFFECT: efficient doping, higher quality of diamond, decreased temperature and pressure.
2 cl, 2 dwg, 1 tbl, 6 ex
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