REACTION CELL OF HIGH-PRESSURE AND TEMPERATURE MULTI-DIE APPARATUS BARS FOR GROWING NITROGEN-FREE DIAMONDS OF TYPE IIA BY HPHT Russian patent published in 2024 - IPC C30B35/00 C30B29/04 C30B1/12 B01J3/06 C01B32/26 

FIELD: growing monocrystals.

SUBSTANCE: invention relates to growing nitrogen-free diamond monocrystals of type IIa according to physical classification by HPHT method, used as heat sinks and thermal distributors in electronics, in laser installations and radiation detectors, in space industry. Reaction cell of multi-die apparatus of high pressure and temperature "BARS" for growing nitrogen-free monocrystals of diamond comprises coaxially installed cylindrical graphite heating element 1 with end current lead covers 2 and current lead rods 3 and insulating bushing 4 arranged inside heating element 1. Reaction growth volume of bushing 4 is filled from bottom to top in layers and includes lower locking substrate tablet 5 with at least one oriented seed diamond crystal pressed therein, metal catalyst 6, carbon source 7, upper locking tablet 8 and nitrogen getter – titanium disk 9 arranged in the centre of upper locking tablet 8. Ratio of diameter of titanium disc 9 is 2/3-3/4 to diameter of upper locking tablet 8. Weight of titanium disc 9 is 9-13% of weight of metal catalyst 6. Lower locking substrate tablet 5 is made of zirconium oxide and caesium chloride in ratio, wt.%: ZrO₂ – 50-60, CsCl – 40-50. Upper locking tablet 8 is made of zirconium oxide and caesium chloride in ratio, wt.%: ZrO₂ – 60-70, CsCl – 30-40.

EFFECT: invention increases quality of grown nitrogen-free diamond monocrystals due to complete elimination of titanium and its products in reaction growth volume, reduces cracking of diamond crystals at the stage of removal of P-T parameters by 15-20%.

1 cl, 2 dwg, 1 tbl, 1 ex