PROCESS OF GROWING OF MONOCRYSTALS OF EMERALD Russian patent published in 1996 - IPC

FIELD: electronics, physics. SUBSTANCE: process deals with growing of high-purity monocrystals of emerald by method of temperature difference on oriented seed from melt containing starting material of oxides of beryllium, aluminium and silicon with activating additives and flux-solvent. Composition of nonvolatile flux providing for high rate of growth of homogeneous layer on seed is selected by conditions of solubility of each of components of oxides of emerald. Mixture of wolframate and bismuth vanadate or bismuth wolframate and lead taken in relation (2-4):1 is taken as flux-solvent. For growth of layer on seed homogeneous in quality oriented in parallel to prosm (1010) starting oxides are taken in relation close to stoichiometric composition of beryl or with excess of aluminium oxide up to 10 per cent by mass. For seed oriented in parallel to prism (1120) excess of beryllium oxide up to 30-50 per cent by mass with respect to stoichiometry is taken. For increase of growth rate system can be cooled additionally with rate of 0.05-0.06 deg/h. Process leads to growing of crystals of high optical and jewelry quality. EFFECT: enhanced growing productivity of process. 4 cl, 1 tbl