PLASMA DEVICE AND SYSTEM Russian patent published in 2013 - IPC B44C1/22 H05H1/34 

FIELD: process engineering.

SUBSTANCE: invention relates to treatment of materials by plasma. Plasma device comprises first anodic plasma head and first cathodic plasma head. Every said plasma head comprises electrode, plasma passage and main gas inlet arranged between, at least, section of said electrode and said plasma passage. First anodic and second cathodic plasma heads are arranged at certain angle relative to each other. Plasma device comprises also second anodic and second cathodic plasma heads arranged at certain angle relative to each other. Angle between said first cathodic and anodic heads and second cathodic and anodic heads makes 50-90 degrees.

EFFECT: higher efficiency of treatment.

7 cl, 12 dwg