PLASMA DEVICE AND SYSTEM Russian patent published in 2012 - IPC C23C4/12 H05H1/44 B23K10/00 

FIELD: metallurgy.

SUBSTANCE: double-type plasma device includes anode plasma head and cathode plasma head. Each of the plasma heads includes an electrode and plasma flow channel, and inlet element for the main gas at least between the part of electrode and plasma flow channel. Anode plasma head and cathode plasma head are oriented at some angle in the direction to each other. At least one of the plasma flow channels includes three cylindrical sections.

EFFECT: three cylindrical sections of plasma flow channels provide the reduction of occurrence of secondary arches.

14 cl, 12 dwg