PROCESSING METHOD OF SCRAPS OF ANODES OF TANTALUM OXIDE-SEMICONDUCTOR CAPACITORS Russian patent published in 2013 - IPC C22B34/24 C22B3/06 C22B7/00 

FIELD: metallurgy.

SUBSTANCE: method involves cleaning of scraps by acid treatment with removal of manganese dioxide. Then, deoxidation of cleaned scraps, its hydration, grinding, dehydration at increased temperature is performed so that tantalum hydride powder is agglomerated and tantalum capacitor powder is obtained. At that, acid treatment is performed at room temperature using the solution containing 100-300 g/l of sulphuric acid and 110-300 g/l of hydrogen dioxide, or the solution containing 30-150 g/l of hydrochloric acid and 75-225 g/l of hydrogen dioxide. Scrap hydration is performed by treatment using the solution of hydrofluoric acid with concentration of 1-5%. The obtained capacitor tantalum powder provides specific charge of up to 7300 mcC/g, breakdown voltage of more than 200 V and leakage current of 0.0001-0.0003 mcA/mcC when being used in anodes of tantalum oxide-semiconductor capacitors.

EFFECT: reduction of energy intensity and improvement of environmental friendliness of the process at its simultaneous simplification.

3 cl, 6 ex