PROCESS OF MANUFACTURE OF VOLUMETRIC-POROUS ANODE OF OXIDE-SEMICONDUCTOR CAPACITOR Russian patent published in 1994 - IPC

FIELD: radio electronics. SUBSTANCE: anodes are manufactured by pressing of powder of material containing niobium or tantalum or their alloy or tantalum with molybdenum or wolfram. In addition material includes hydrogen in the amount of 0.05-1.0 per cent by mass. Anodes are loaded into furnace and are held at temperature 600-800 C for 15-30 min. Sintering is conducted at temperature 1000-1600 C, mainly at 1350 C, for 30 min. After cooling of anodes to 100 C furnace is unloaded and electrolytic oxidation is performed in 10% solution of orthophosphoric acid at specific current density of 30 μA/g. Then anodes are rinsed in desalted water at 40-60 C for 15-30 min and dried at 130 C for the course of 30-60 min. Use of material of specified composition provides for refining of impurities from anode and for aeration of its structure which results in manufacture of anodes with specific charge 20-25 mCl/g and specific leakage current of 0.01 μAA/μClC. EFFECT: increased specific charge, reduced leakage current.