FIELD: powder metallurgy. SUBSTANCE: material includes tantalum or niobium and hydrogen in the amount of 0.1-1.0 per cent by mass. Production of this material involves preliminary degassing of starting ingot of tantalum or niobium at 500 C and residual pressure 1.3 Pa for 0.5 h and hydrogenation under hydrogen pressure 0.70.7·105 Pa at 700 C for 2.0 h, then at 400 C for 12 h with later cooling to 180 C for 4 h. After cooling to room temperature produced material is reduced in size to dispersity of 0.1-100 μm. Samples of anodes provide for specific charge 16-30 mCl/g and for leakage current 1-7 μAA. EFFECT: increased specific charge, reduced leakage currents and reduced usage of materials for manufacture of capacitors. 3 tbl
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PROCESS OF MANUFACTURE OF VOLUMETRIC-POROUS ANODE OF OXIDE-SEMICONDUCTOR CAPACITOR | 1987 |
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Authors
Dates
1994-02-28—Published
1987-07-28—Filed