METHOD OF PRODUCING LARGE-SIZE GALLIUM ANTIMONIDE MONOCRYSTALS Russian patent published in 2014 - IPC C30B15/02 C30B15/04 C30B29/40 

FIELD: chemistry.

SUBSTANCE: invention relates to production of semiconductor materials and specifically to production of gallium antimonide monocrystals, which are used as substrate material in isoperiodic heterostructures based on ternary or quaternary solid solutions in Al-Ga-As-Sb and In-Ga-As-Sb systems, which enable to produce a wide range of optoelectronic devices (radiation sources and detectors in the 1.3-2.5 mcm spectral range). The method includes synthesis and growing a monocrystal using a Chochralski method in a hydrogen atmosphere on a seed crystal in the [100] crystallographic direction, wherein synthesis of the monocrystal is carried out in a single process with the flow rate of especially pure hydrogen in the range of 80-100 l/h and holding the melt at the synthesis step at 930-940°C for 35-40 minutes.

EFFECT: invention enables to obtain perfect large-size gallium antimonide monocrystals with diameter of 60-65 mm.

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