FIELD: chemistry.
SUBSTANCE: invention relates to field of obtaining semi-conductor materials, which are applied as substrate material in isoperiod heterostructures based on triple and fourfold solid solutions in systems Al-Ga-As-Sb and In-Ga-As-Sb, which make it possible to create broad range of optoelectronic devices (sources and receivers of irradiation on spectral range 1.3-2.5 mcm). Method includes synthesis from initial components and growing of monocrystals by method of Czochralski in hydrogen atmosphere on seed, oriented in crystallographic direction [100]. To initial components added is isovalent admixture of indium in form of especially pure indium antimonide (InSb) in the interval of elementary indium concentration (2-4)×1018 at/cm3, with synthesis and growing of monocrystals being realised in single technological cycle.
EFFECT: invention makes it possible to obtain big-volume low dislocation density monocrystals of gallium antimonide with reduced dislocation density.
2 cl, 1 dwg, 2 tbl, 1 ex
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