FIELD: electronic engineering; materials for miscellaneous semiconductor devices using gallium arsenide epitaxial layers.
SUBSTANCE: intermetallic compounds chosen from group incorporating tin arsenide SnAs, palladium antimonide PdSb, manganese polyantimonide Mn2Sb, nickel stannate Ni3Sn2, nickel aluminate Ni2Al3, nickel germanate Ni2Ge, and cobalt germanate Co2Ge are used as materials of substrates for growing gallium arsenide epitaxial layers.
EFFECT: enhanced structural heterogeneity of gallium arsenide layers being grown.
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