ARRAY SENSOR OF TERAHERTZ RADIATION (VERSIONS) Russian patent published in 2013 - IPC G02F1/00 

FIELD: instrumentation.

SUBSTANCE: proposed device consists of dielectric film with partially selective surface made at the side of terahertz radiation incidence while continuous layer with metallic conductance is applied on opposite side. In compliance with first version, said partial selective surface is composed of array of fragments with different topological patterns to provided for different spectral and/or polarisation sensitivities while thin layer of high IR emittance material is applied on opposite side, over said continuous layer with metallic conductivity. In compliance with second version, second dielectric layer is applied on that with metallic conductivity whereat metalised topological pattern is formed to make second frequency-selective surface. Note here that thickness of second dielectric layer and topological pattern of second frequency-selective surface are selected so that to allow resonance absorption of IR radiation.

EFFECT: integrated multispectral or polarisation-sensitive detection of terahertz radiation.

14 cl, 6 dwg