FIELD: measuring equipment.
SUBSTANCE: device comprises of a flat body with a supporting frame in it in the form of two dielectric rings. The body includes two windows for registering the radiation and is fixed to the holder with a stand. Between the dielectric rings there is a IR-THz converter, which is a dielectric substrate with a deposited two-layer Al-VOx film structure, which is banded by a film heater with a gap. On the opposite side of the dielectric substrate, under the Al-VOx film structure, there is a grid of Al with a thickness of not more than 100 nm, with square holes. The length of the side of the grid is directly proportional to the wavelength of the radiation propagating in the dielectric substrate. The temperature sensor is located on the free part of the surface of the dielectric substrate.
EFFECT: expansion of the device's dynamic range.
4 cl, 7 dwg
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