TERAHERTZ HOT ELECTRON BOLOMETER Russian patent published in 2022 - IPC H01L31/113 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to semiconductor devices for detecting radiation in the terahertz (THz) frequency range, namely, direct detectors of THz radiation of the bolometric type. A hot electron bolometer for detecting radiation in the terahertz (THz) frequency range includes a semiconductor structure with a standard field-effect transistor topology deposited on its surface, while an epitaxial structure is used as a photoabsorbing element, consisting of a system of conducting one-dimensional nanowires of tin atoms embedded in the volume of the GaAs crystal, the band structure of which is a set of potential wells with electrons localized in them, and the metal contacts on the surface of the structure are oriented so that the current in the transistor channel flows in the direction perpendicular to the nanowires, while a weak pulling field is applied between the source and drain contacts, and the blocking voltage on the gate is set in such a way that there is no conduction in the transverse direction.

EFFECT: invention makes it possible to create a bolometric-type THz radiation detector with high sensitivity and polarization selectivity, capable of operating in a wide temperature range from 4.2 to 300 K.

1 cl, 1 dwg, 1 ex