FIELD: metallurgy.
SUBSTANCE: method includes etching of semiconductor plates in a bath with a solution NH4HF2, continuously injected with a flow of an ozone-oxygen mixture with ozone concentration of 15.9 vol. %, and their flushing with deionised water. Also in the method regeneration of the treated etching solution of NH4HF2 is carried out by contact deposition of iron and copper ions at rejected silicon plates, placed into a bath with the specified solution, continuously injected with the ozone-oxygen mixture flow.
EFFECT: invention provides for treatment of a surface of semiconductor plates from metal contaminants, and also makes it possible to create a closed technology of treatment of specified plates and regeneration of treated etching solutions with minimum consumption of chemical agents.
2 cl, 2 dwg, 1 ex
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