METHOD OF CLEANING AND OBTAINING POROUS SURFACE OF SEMICONDUCTOR PLATES Russian patent published in 2014 - IPC H01L21/306 C25F3/12 

FIELD: chemistry.

SUBSTANCE: removal of organic contaminants and obtaining of a porous surface of semiconductor plates are carried out jointly in a single step in HBF₄ or NH₄HF₂ solutions activated with ozone with high concentration of 17% or higher. The semiconductor plates are etched in concentrated, more than 10%, HBF₄ or NH₄HF₂ solutions.

EFFECT: use of the disclosed method of cleaning and obtaining a porous surface of semiconductor plates in HBF₄ or NH₄HF₂ solutions activated with ozone of high concentration simplifies the technique, lowers the temperature of the cleaning process, reduces power consumption, reduces the number of steps and time of treating the plates, improves environmental safety of cleaning and obtaining a porous surface of semiconductor plates.

2 cl, 1 tbl, 2 dwg