METHOD OF CLEANING SURFACE OF SEMICONDUCTOR PLATES Russian patent published in 2013 - IPC H01L21/306 

Abstract RU 2495512 C2

FIELD: chemistry.

SUBSTANCE: surface of semiconductor plates is cleaned in a bath with a detergent bifluoride solution activated with concentrated nitrogen and ultrasound at room temperature, followed by washing with dionised water.

EFFECT: highly efficient, resource- and energy-saving, ecologically clean and safe method of cleaning the surface of semiconductor plates from organic and metallic contaminants and shorter time for treating the plates.

2 cl, 1 dwg

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RU 2 495 512 C2

Authors

Rykov Valerij Mikhajlovich

Zarezov Maksim Aleksandrovich

Dates

2013-10-10Published

2011-11-23Filed