MICROWAVE POWER AMPLIFIER Russian patent published in 2013 - IPC H03F3/00 

FIELD: radio engineering, communication.

SUBSTANCE: microwave power amplifier has a sealed radiator housing with plug-in sealed adaptors for input and output of microwave signals, inside of which there is a microstrip printed-circuit board on which a two-stage amplifier is assembled; a high-power balance field-effect transistor 2P980BS is connected in the second stage of the amplifier; low-resistance input and output resistors of the balance field-effect transistor are matched by a symmetrical distributed communication line with smooth variation of characteristic impedance, and tunable capacitors are in form of printed-circuit boards made from foil-clad dielectric on which the foil is remove on one side.

EFFECT: meeting output power requirements of the amplifier of not less than 110 W, reduced dispersion of phase and amplitude of the transfer constant, providing stability and repeatability of technical characteristics of the amplifier in the operating frequency range from 825 MHz to 882 MHz in serial production conditions.

2 dwg