INTEGRATED MICROWAVE CIRCUIT Russian patent published in 2013 - IPC H01L27/00 H05K1/00 

FIELD: electricity.

SUBSTANCE: in an integrated microwave circuit comprising a dielectric substrate, on the face side of which there are only passive elements arranged, or - passive elements, transmission lines, leads, active elements, at the same time elements are connected electrically, and the integrated circuit is grounded, the dielectric substrate is made from a diamond plate with thickness equal to (100-200)×10^-6 m, which has a metallised coating, at the same time the metallised coating is arranged in the form of a solid layer on the reverse and end sides, and a local layer on the face side of the specified dielectric substrate, at the same time the specified layers are arranged with identical thickness, each equal to 3-7 depths of the skin layer, and grounding of the integrated circuit is made by means of the specified metallised coating.

EFFECT: improved electric characteristics, higher reliability and reduction of weight and dimension characteristics.

8 cl, 6 dwg, 1 tbl