FIELD: electrical engineering.
SUBSTANCE: according to the invention phototransistor contains gate electrode formed at insulating substrate; insulating film of the gate which covers gate electrode; semiconductor layer formed at surface of insulating film of the gate, it has channel zone opposite to gate electrode; source electrode and drain electrode which cover respective zones of semiconductor layer and interlayer insulating film covering channel zone of semiconductor layer, source electrode and drain electrode. Source electrode and drain electrode have the same current potential and phototransistor includes transparent electrode formed at the surface of interlayer insulating film so that it overlaps channel zone and regeneration controller purposed to reduce charge accumulated in channel zone, zone oriented towards transparent electrode by means of voltage feed between transparent electrode, gate electrode and source electrode.
EFFECT: reduction of deterioration behaviour in light emission receipt of optical sensors with their aging.
7 cl, 7 dwg
