SEMICONDUCTOR DEVICE, METHOD OF ITS MANUFACTURING AND DISPLAY DEVICE Russian patent published in 2012 - IPC H01L27/14 H01L21/336 

FIELD: electricity.

SUBSTANCE: semiconductor device comprises a thin-film transistor, which includes a semiconductor layer, which has an area of a channel, an area of source and an area of drain, a gate electrode, which is arranged as capable of controlling conductivity of a channel area, and an insulating film of a gate arranged between this semiconductor layer and a gate electrode, and a thin-film diode, which includes a semiconductor layer, which has at least an area of n-type and an area of p-type, at the same time appropriate semiconductor layers of the thin-film transistor and the thin-film diode represent crystalline semiconductor layers, which were formed by crystallisation of one amorphous semiconductor film, and at the same time on the surface of the semiconductor layer of the thin-film diode there are ledges, and the semiconductor layer of the thin-film diode has higher roughness of the surface compared to the semiconductor layer of the thin-film transistor.

EFFECT: invention makes it possible to create a semiconductor device, which includes a thin-film transistor and a thin-film diode on one substrate, with improved characteristics.

33 cl, 18 dwg