FIELD: chemistry.
SUBSTANCE: continuous layers of silicon are obtained by electrolysis of potassium hexafluorosilicate (K2SiF6) in melt of the following composition, wt %: KCl (15÷50) - KJF (5÷50) - (10÷35) K2SiF6. Electrolysis is performed at temperature 650 - 800°C, cathode current density 10 mA/cm2 - 150 mA/cm2 in air atmosphere.
EFFECT: method makes it possible to obtain silicon in form of continuous from 1 mcm to 1 mm thick layers both on flat and curved surfaces, reduce silicon loss.
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