METHOD FOR ELECTROLYTIC PRODUCTION OF SILICON FROM MOLTEN SALTS Russian patent published in 2021 - IPC C25C3/34 C25C5/04 B82B1/00 

FIELD: metallurgy.

SUBSTANCE: invention relates to the metallurgy of semiconductor materials, in particular, to the electrolytic production of silicon from molten salts. The method includes electrolysis of molten halide electrolyte, which is a mixture of salts of 10-60 KCl wt.% and 40-90 CsCl with the addition of up to 50 wt.% K₂SiF₆. Electrolysis is carried out at a temperature from 610 to 750°C and a cathodic current density of not more than 120 mA/cm², with a cathodic overvoltage of not more than 0.25 V using a soluble silicon anode.

EFFECT: method allows reducing the temperature of electrolytic production of silicon, as well as simplifying the process of silicon production by eliminating the need for careful preliminary preparation of salts before preparing the electrolyte, ensuring the possibility of obtaining high-purity silicon.

1 cl, 2 dwg, 1 tbl