METHOD FOR MANUFACTURING OF SUBSTRATE WITH STRUCTURE OF THIN-FILM TRANSISTORS Russian patent published in 2013 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: method for manufacturing of substrate with structure of thin-film transistors envisages the stage for formation of gating electrode and first connection at the substrate; the stage for formation of gating insulating film which has a contact cut in the position covering the first connection; the stage for formation of source electrode and drain electrode which cover the gating electrode, at that electrodes are separated from each other and form the second connection which is connected to the first one through a contact cut in the gating insulating film; the stage for formation of interlayer insulating film with creation of a print at the second insulating film after formation of oxide semiconductor film and the second insulating film and the stage for formation of pixelised electrode by resistance reducing of oxide semiconductor film not protected by interlayer insulating film.

EFFECT: cost reduction for manufacturing of thin-transistor substrate formed from oxide semiconductor film with structure of conducting paths at tail-piece of the substrate.

20 cl, 13 dwg