SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF Russian patent published in 2014 - IPC H01L25/04 

Abstract RU 2506661 C1

FIELD: physics.

SUBSTANCE: invention relates to semiconductor devices and methods for production thereof. In a semiconductor device, having a mounting substrate, a thin-film element formed on the mounting substrate, and a semiconductor element mounted to the mounting substrate, the semiconductor element includes a main portion and a plurality of underlying layers which are stacked on the side of the main portion of the semiconductor element facing the mounting substrate, wherein each underlying layer includes an insulating layer and a circuit pattern on the insulating layer, and the circuit patterns are connected to each other through contact openings in the insulating layers. The circuit pattern of one of the underlying layers closest to the mounting substrate has an extended portion which continues towards the thin-film element, and the thin-film element is connected to the main portion of the semiconductor element through a connecting line provided on a polymer layer, the extended portion and the circuit patterns.

EFFECT: invention provides optimum connection between thin-film elements and semiconductor elements on a mounting substrate.

8 cl, 33 dwg

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RU 2 506 661 C1

Authors

Tomijasu Kazukhide

Takafudzi Jutaka

Fukusima Jasumori

Tada Kensi

Matsumoto Sin

Dates

2014-02-10Published

2010-12-02Filed