METHOD OF MEASURING LOCAL ELECTROMAGNETIC FIELDS ON SURFACE OF HETEROSTRUCTURES Russian patent published in 2013 - IPC H01L21/66 G01N21/55 

FIELD: physics.

SUBSTANCE: method involves measuring, in geometry based on signal reflection, a second harmonic from a sample surface irradiated with picosecond laser pulses with power required to generate a second optical harmonic but not higher than breakdown power. The polarisation direction of linearly polarised pumping radiation is gradually varied by turning a half-wave plate. While varying the polarisation direction of pumping radiation, an analyser which transmits second harmonic radiation is rotated in order to determine morphological features of components of the layer of semiconductor crystals. Scanning the layer of microcrystals while varying the distance from the focusing lens to the sample under strict focusing conditions enables to determine the quality of the heterostructure on the thickness.

EFFECT: high quality of deposited heterostructure layers owing to measurement of distribution intensity of local electromagnetic fields on the surface of a microlayer and determining crystallographic and morphological characteristics of components of the layer of microcrystals.

2 cl, 9 dwg