NONELECTROLYTIC DEPOSITION OF BARRIER LAYERS Russian patent published in 2013 - IPC C23C18/50 

FIELD: metallurgy.

SUBSTANCE: solution for deposition of barrier layers on metal surfaces comprises nickel and molybdenum compounds, one first reducer selected from secondary or tertiary cyclic aminoborans, one second reducer, in particular, phosphonic acid or its salt and one complexing agent. Note here that said solution has pH varying from 8.5 to 12. Proposed method on noncatalytic deposition of barrier layers on semiconductor substrate metal surfaces comprises: a) producing solution comprises nickel and molybdenum compounds, one first reducer selected from secondary or tertiary cyclic aminoborans, one second reducer, in particular, phosphonic acid or its salt, b) setting solution pH varying from 8.5 to 12, c) setting solution temperature to 50°C - 85°C, d) bringing metallic surface in contact with said solution at 50°C - 85°C to deposit barrier layer on metal substrate.

EFFECT: reduced working temperature without activation by palladium.

10 cl, 2 tbl, 4 ex