COMPOSITIONS FOR DE-ENERGISED DEPOSITION OF TRIPLE MATERIALS FOR SEMICONSUCTOR INDUSTRY Russian patent published in 2009 - IPC C23C18/50 

FIELD: metallurgy.

SUBSTANCE: method includes application by de-energised deposition on catalystically activated insulating barriers of combined diffusion barrier and crystal-nucleating layer, consisting of alloys NiRe-P, NiMo-P, NiW-P, NiRe-B, NiMo-B, NiW-B, NiRe-P/B, NiMo-P/B or NiW-P/B under metallic substratum and/or in the capacity of encapsulating barrier on the surface of metallic substratum, herewith metallic substratum consists of metal selected from group including Cu, Ag, Co, Ni, Pd and Pt, and barrier plate contains molybdenum in amount from 5 up to 24 at % or Re in amount from 5 up to 23 at % or tungsten in amount from 5 up to 15 at %. Composition for de-energised deposition of operating in the capacity of barrier plate semiconductor element of triple nickel bearing metallic alloys of type NiM-P, where M means Mo, W, Re, containing NiSO₄×6 H₂O, NaH₂PO₂ and composition from group, including Na₂WO₄, Na₂MoO₄ and KReO₄, in water solution in suitable concentration, herewith peak concentration Na₂WO₄ is 0.14 mol/l, peak concentration Na₂MoO₄ - 3·10^-2 mol/l, peak concentration KReO₄- 1·10^-2 mol/l.

EFFECT: receiving of barrier plate of semiconductor element for prevention of copper diffusion applied in the capacity of electric wiring material.

13 cl, 7 dwg, 3 tbl, 4 ex