NANOSTRUCTURES CONSISTING OF GATE METALS AND GATE METAL SUB OXIDES AND METHODS OF THEIR PRODUCTION Russian patent published in 2013 - IPC B22F9/22 B82B3/00 C22C29/12 

Abstract RU 2493939 C2

FIELD: process engineering.

SUBSTANCE: invention relates to fine structures including gate metal or gate metal sub oxides to be used as, for example, materials for catalysts, membranes, filters, capacitor anodes. Lamellar nanostructures comprise gate metal or gate metal sub oxides and exist in powders or surface areas of metallic or ceramic substrates in the form of strips or layers with crosswise size of 5-100 nm. Proposed method comprises oxidation of gate metal oxides and, after reduction, immediate cooling to temperature whereat lamellar structures are still stable.

EFFECT: fine structures with high specific surface.

16 cl, 4 dwg

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RU 2 493 939 C2

Authors

Gille Gerkhard

Shnitter Kristof

Brumm Khol'Ger

Khaas Khel'Mut

Mjuller Robert

Bobet Manfred

Dates

2013-09-27Published

2008-07-23Filed