METHOD OF CRYSTAL GROWTH BY KIROPULOS METHOD Russian patent published in 2013 - IPC C30B17/00 C30B9/12 C30B15/10 

Abstract RU 2494176 C1

FIELD: metallurgy.

SUBSTANCE: proposed method of crystal growth from the melt or solution-melt comprises crystal growth at starting bar locked at crystal holder at melt surface top point, growing the crystal in growth crucible at slow temperature decrease and cooling the grown crystal. Note here that, after growth cycle, melt or solution-melt remained in crucible is drained via pipe heated by extra heater arranged at crucible bottom while grown crystal is cooled in crucible without melt. Lithium triborate crystal sized to 150×130×80 mm is thus produced with optically qualitative part makes 80-90-volume of grown crystal.

EFFECT: ruled out cracking of grown crystal and deformation of platinum crucible melt in slow cooling.

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RU 2 494 176 C1

Authors

Kokh Aleksandr Egorovich

Kokh Konstantin Aleksandrovich

Kononova Nadezhda Georgievna

Martirosjan Naira Sadrakovna

Dates

2013-09-27Published

2012-03-11Filed