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2 133 786

(13)

C1

(51)

IPC

(21) (22)

Application

97111347/25, 1997-07-02

(22)

Actual filing date

1997-07-02

(45)

Published

1999-07-27

(72)

Inventor

Kokh A.E.

(73)

Holder

Institut Mineralogii I Petrografii So Ran

DEVICE FOR GROWING OF SINGLE CRYSTALS Russian patent published in 1999 - IPC

Abstract RU 2133786 C1

FIELD: devices for growing of single crystals from melts/solution-melts. SUBSTANCE: single crystals are grown on rotating seed with concurrent rotation of crucible with creation of temperature gradient in zone of crystal growing, and direct and active formation of convection structure in entire volume of melt/solution-melt. Forced convection of melt/solution-melt is formed in zone of crystal growing by installation coaxially to crucible of forming member - mixer made in the form of joined cylinder - forming member and multipaddle mixer. Forming member-mixer is made for displacement inside crucible up to immersion of paddle mixer and one part of cylinder into melt/solution-melt. Use of this device allows growing of crystals with length exceeding 20 mm without signs of cellular growing. EFFECT: higher efficiency. 2 dwg

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RU 2 133 786 C1

Authors

Kokh A.E.

Dates

1999-07-27—Published

1997-07-02—Filed

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