FIELD: crystal growing. SUBSTANCE: control of crystallization process is based on noncontact excitation of azimuthal circular flows - forced convection in crystal growth volume by rotation of heat field. Rotation of heat field is attached by producing cyclic motion of heat wave over outer wall of growth crucible or crystallizer, hence, over perimeter of growing crystal due to alternative connection at preset frequencies of separate heating elements of furnace. Device for control of crystallization process has growth crucible or crystallizer round which heater in the form of separate vertical heating elements is arranged, regulating differential thermocouple, units of control of heating and temperature monitoring. Regulating differential thermocouple is made of separate members whose working junctions are arranged in synchronous between separate heating elements. Device additionally has formed of switching frequency of heating elements and thyristor unit of voltage former on heating elements and connected with regulating thermocouple. EFFECT: provided conditions of noncontact heat-mass transfer in crystallizing medium. 2 cl, 5 dwg
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