POLYCHIP-DIP AND METHOD FOR PRESENTATION OF CRYSTALS INTERCONNECTION IN IT Russian patent published in 2013 - IPC H01L23/48 

FIELD: electricity.

SUBSTANCE: polychip-dip includes substrate having the first side, the opposite second side and the third side which lasts from the first side up to the second side, the first chip fixed at the first side of the substrate and the second chip also fixed at the first side of substrate and bridge located nearby to the third side and connected to the first chip and second chip. None of substrate regions is located under the bridge. The bridge forms connection between the first and second chips. Alternatively the bridge can be located in the cavity at substrate or between substrate and chip layer. The bridge can be presented by an active chip and fixed at the substrate using wire connections.

EFFECT: invention allows manufacturing a structure of interconnections between chips in bodies with higher density and higher performance characteristics and reduced costs.

23 cl, 17 dwg