FIELD: chemistry.
SUBSTANCE: method of producing nitride semiconductor light-emitting element with turned over chip, having structure of nitride semiconductor light-emitting element having layer of nitride semiconductor of n-type and p-type semiconductor nitride layer, which are deposited on substrate, as well as section of connection of electrode n-side with nitride semiconductor layer of n-type and p-electrode side section of connection with nitride semiconductor layer of p-type with same flat side of substrate, n-electrode side connected with electrode n-and p-electrode side, connected with p-electrode side; and metal column leads, formed on electrode of n-and p-electrode side, including stages of protective layer formation step, step to the first structure of the resist, step to step of making protective layer, etching first metal layer, step to form second resist structure, step of forming the second metal layer and step for removing resist structure.
EFFECT: invention enables to form reliable nitride semiconductor light-emitting element, having thick metal column outputs, as well as method of producing nitride semiconductor light-emitting element with improved efficiency.
12 cl, 28 dwg
