FIELD: electricity.
SUBSTANCE: device contains five transistors, two resistors and current source between supply bus and output terminal; bases of the first and second transistors are connected collectors of the first and fifth transistors. The first resistor is connected between common bus and emitter of the second transistor; emitters of the first and third transistors are connected to common bus. Collector of the third transistor is connected to output terminal, base of the third transistor is connected to collector of the second transistor and the first output of the second resistor, bases of the fourth and fifth transistors are connected to collector of the fourth transistor and second output of the second resistor, emitters of the fourth and fifth transistors are connected to output terminal.
EFFECT: obtainment of thermally stable output voltage at values closed to doubled energy gad width.
3 dwg
Title | Year | Author | Number |
---|---|---|---|
SOURCE OF REFERENCE VOLTAGE | 2012 |
|
RU2518974C2 |
SOURCE OF REFERENCE VOLTAGE DETERMINED THROUGH ENERGY GAP DOUBLED WIDTH | 2014 |
|
RU2541915C1 |
SOURCE OF REFERENCE VOLTAGE DETERMINED THROUGH ENERGY GAP DOUBLED WIDTH | 2012 |
|
RU2488874C1 |
REFERENCE VOLTAGE SOURCE | 2011 |
|
RU2461048C1 |
REFERENCE VOLTAGE SOURCE BASED ON DOUBLE WIDTH OF SILICON INHIBITED ZONE | 2014 |
|
RU2547227C1 |
TEMPERATURE STABLE RADIATION-RESISTANT REFERENCE-VOLTAGE SOURCE BASED ON DIFFERENTIAL PAIR OF FIELD-EFFECT TRANSISTORS | 2014 |
|
RU2546083C1 |
REFERENCE VOLTAGE SOURCE | 2015 |
|
RU2580458C1 |
REFERENCE VOLTAGE SOURCE BASED ON TRIPLE WIDTH OF SILICON INHIBITED ZONE | 2014 |
|
RU2546079C1 |
SOURCE OF REFERENCE VOLTAGE | 2011 |
|
RU2461864C1 |
SOURCE OF REFERENCE VOLTAGE | 2013 |
|
RU2523121C1 |
Authors
Dates
2014-01-20—Published
2012-09-28—Filed