TEMPERATURE STABLE RADIATION-RESISTANT REFERENCE-VOLTAGE SOURCE BASED ON DIFFERENTIAL PAIR OF FIELD-EFFECT TRANSISTORS Russian patent published in 2015 - IPC G05F3/16 

FIELD: electricity.

SUBSTANCE: device comprises the first and second field-effect transistors with control p-n-junction, which sources are jointed, the first resistor coupled between sources of the first and second field-effect transistors, the second resistor coupled between source of the first and field-effect transistor and common bus, the third resistor which is coupled by its first output to power supply bus, the first bipolar transistor coupled by its collector to power supply bus, the fourth and fifth resistor and current source. The second output of the third resistor is coupled to sources of field-effect transistors, gate of the first field-effect transistor is connected to power supply bus, the fourth resistor is coupled between power supply bus and gate of the second field-effect transistor, the fifth resistor is coupled between gate of the second field-effect transistor and emitter of the first bipolar transistor which base is coupled to power supply bus, current source is coupled between emitter of the first bipolar transistor and common bus and drain of the second field-effect transistor is the device output.

EFFECT: potential regulation of output voltage in wide range.

6 dwg