SOURCE OF REFERENCE VOLTAGE DETERMINED THROUGH ENERGY GAP DOUBLED WIDTH Russian patent published in 2015 - IPC G05F1/56 

Abstract RU 2541915 C1

FIELD: electricity.

SUBSTANCE: device contains five transistors, three resistors and a current source which is coupled between the power supply bus and output terminal; the first resistor is coupled by its first output to the common bus, the second and third resistors are connected by their first outputs to the output terminal; bases of the first and the second transistors are connected to collectors of the first and fifth transistors and bases of the fourth and fifth transistors; the second output of the first resistor is coupled to emitter of the second transistor; emitters of the first and third transistors are connected to the common bus; collector of the third transistor is connected to the output terminal; the base of the third transistor is connected to collectors of the second and fourth transistor; emitter of the fourth transistor is connected to the second output of the second resistor; emitter of the fifth transistor is connected to the second output of the first resistor.

EFFECT: receipt of thermally stable output voltage, which value is close to doubled energy gap width of the used semiconductor.

3 dwg

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RU 2 541 915 C1

Authors

Starchenko Evgenij Ivanovich

Barilov Ivan Vasil'Evich

Gavlitskij Aleksandr Ivanovich

Klimenko Maksim Vladimirovich

Chernyshov Dmitrij Jur'Evich

Dates

2015-02-20Published

2014-03-18Filed