REFERENCE VOLTAGE SOURCE BASED ON TRIPLE WIDTH OF SILICON INHIBITED ZONE Russian patent published in 2015 - IPC G05F1/20 

FIELD: electrical engineering.

SUBSTANCE: reference voltage source comprises 1^st, 2^nd and 3^rd transistors. 3^rd transistor collector is connected to adjustment element control input that makes the device output. Its feed input is connected with supply bus. Current source is connected in between supply bus and 3^rd transistor collector. 1^st transistor collector is connected with first output of 1^st resistor, its second output being connected to 1^st transistor base. First output of 2^nd resistor is connected to device output, as well as 4^th, 5^th and 6^th transistors.

EFFECT: output voltage increased to the level complying with triple width of inhibited zone, higher stabilisation factor, stable output voltage.

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