QUANTUM DOT ORGANIC LIGHT-EMITTING DIODE Russian patent published in 2014 - IPC H01L51/50 B82B1/00 

FIELD: physics, optics.

SUBSTANCE: invention can be used in designing efficient devices for displaying alpha-numeric and graphic information. The increasing amount of visual information and advances in computer engineering require new-generation alpha-numeric displays. Disclosed is a quantum dot organic light-emitting diode with a monolayer of semiconductor quantum dots, lying at a distance from electron-conducting and hole-conducting layers, defined by an expression which links the Forster radius and the quantum dot radius. The active element is a monolayer of two-component (core-cladding) semiconductor nanoparticles capable of changing the diameter of the semiconductor core in the range of 2.0-6.0 nm and the thickness of the semiconductor cladding in the range of 1.0-3.0 nm in order to adjust the emission region in the range of 400-650 nm of the visible spectrum.

EFFECT: designing stable organic light-emitting diodes with the highest efficiency from the perspective of transmission of excitation energy from the donor to the active layer, said diodes having a controlled radiation spectrum in the visible wavelength range, which is crucial when designing new-generation alpha-numeric displays.

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