FIELD: chemistry.
SUBSTANCE: invention can be applied in technology of microelectronics, in which layer of copper is to be applied on thin sublayer of cobalt or its alloys (cobalt-phosphorus, cobalt-tungsten-phosphorus) or copper, which is located on the surface of silicic plates. Electro-sedimentation of copper is carried out from electrolyte of copperplating, which contains copper sulfate, ethyl alcohol, ethylenediaminetetraacetic acid (EDTA), ammonium laurylsulphate and ammonia in form of water solution.
EFFECT: electrolyte of copperplating does not contain ions of alkali metals and is suitable for application of copper layers on sublayer of copper, cobalt or its alloys.
4 cl, 4 ex
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