FIELD: chemistry.
SUBSTANCE: invention can be used in producing integrated microcircuits and other electronic devices which use a planar manufacturing technique based on photolithographic processes. The composition for photoactivated etching of silicon dioxide films includes a polymer base - polymethyl methacrylate, a photosensitive component - ammonium fluoride in trifluoroacetic acid solution, a solvent - acetone, a protophilic agent - diphenylamine.
EFFECT: invention simplifies the process of producing a photoetched pattern on a silicon layer, increases the rate of photoetching and significantly reduces defects in the obtained articles.
1 tbl, 4 ex
| Title | Year | Author | Number |
|---|---|---|---|
| PHOTOACTIVATED COMPOSITION FOR ETCHING SILICON NITRIDE FILMS | 2012 |
|
RU2507219C1 |
| PHOTOACTIVATED COMPOSITION FOR SILICON DIOXIDE FILM ETCHING | 2007 |
|
RU2330049C1 |
| COMPOSITION FOR DRY ETCHING OF SILICON DIOXIDE FILMS IN PHOTOLITHOGRAPHIC PROCESS | 2013 |
|
RU2524344C1 |
| METHOD OF KYANITE CONCENTRATE RECYCLING | 2013 |
|
RU2518807C1 |
| POSITIVE PHOTORESIST | 1985 |
|
SU1364051A1 |
| METHOD FOR FORMING BULK SILICON ELEMENTS FOR MICROSYSTEM TECHNOLOGY DEVICES AND A PRODUCTION LINE FOR IMPLEMENTING THE METHOD | 2022 |
|
RU2794560C1 |
| METHOD TO PROCESS TITANIUM-SILICON-CONTAINING STOCK | 2008 |
|
RU2377332C2 |
| METHOD FOR PRODUCING RESISTIVE CONTACTS ON PLANAR SIDE OF STRUCTURE WITH LOCAL REGIONS OF LOW-ALLOYED SEMICONDUCTORS | 1993 |
|
RU2084988C1 |
| POLYORGANOSILANES AND BILAYER POSITIVE MASK FOR POLYORGANOSILANE-BASE PHOTOLITHOGRAPHY | 1992 |
|
RU2118964C1 |
| METHOD OF ION-CHEMICAL ETCHING OF SILICON DIOXIDE AND NITRIDE | 1978 |
|
SU749293A1 |
