FIELD: physics.
SUBSTANCE: invention concerns manufacturing of integrated microcircuits and other electronic devices using planar technology based on photolithographic processes. The technical task was to develop a photoactivated composition for silicon dioxide film etching for photolithographic purposes, which would allow reduce technological process of photolithographical drawing in silicon layer. The offered composition contains (mass%): polymethylmethacrylate (3.2-3.9) as polymeric substrate, ammonium fluoride (3.0-3.7) as photosensitive component, and pyridine (75.0-80.3) and trifluoroacetic acid (12.1-18.8) as solvents.
EFFECT: application of the offered composition simplifies the technological process and decreases the number of flaws of production drastically.
1 cl, 2 ex
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|---|---|---|---|
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|
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