FIELD: chemistry.
SUBSTANCE: disclosed is a composition for chemical etching of silicon dioxide films in a photolithographic process, which contains polyvinyl alcohol as a polymer base and ammonium fluoride as an etching component, and additionally water as a solvent, with the following ratio of components, wt %: polyvinyl alcohol - 10; ammonium fluoride - 0.7-2.0; water - 88.0-89.3.
EFFECT: improved composition.
5 ex
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