METHOD FOR PRODUCING RESISTIVE CONTACTS ON PLANAR SIDE OF STRUCTURE WITH LOCAL REGIONS OF LOW-ALLOYED SEMICONDUCTORS Russian patent published in 1997 - IPC

FIELD: laser diodes, light-emitting diodes, and other devices. SUBSTANCE: method involves coating semiconductor structure with insulating film of silicon dioxide, applying auxiliary insulating layer, forming local regions for contacts by means of resistive mask, depositing contact material of first level, forming local metal contacts using explosion photolithography by dissolving auxiliary insulating layer under unwanted metal regions. Auxiliary insulating layer is europium oxide film ((Eu₂O₃); first-level metal coating is composed of alloys ensuring formation of resistive contacts for low-alloyed semiconductors A³B⁵ of n or p type; (Au:Zn) (Be, Mn) for p type and (Au:Ge) (Te, Sn) for n-type, and selective etching relative to europium oxide film which are subjected to annealing; second-level metal coating is adhesive sublayer of vanadium (V) or chromium (Cr); these procedure are followed by application of one of contact metals: Au, Ni, and others. EFFECT: facilitated procedure. 3 cl, 1 dwg , 1 tbl