TRANSRESISTIVE AMPLIFIER FOR SIGNALS OF AVALANCHE PHOTODIODES Russian patent published in 2014 - IPC H03F3/08 

FIELD: electricity.

SUBSTANCE: transresistive amplifier for signals of avalanche photodiodes contains an input cascade (1) with the first (2) and second (3) low-resistance current inputs and the first (4) and second (5) current outputs related to emitters of the first (6) and second (7) matching transistors which bases are united and collectors are connected to the bases of the respective first (11) and second (12) output transistors which emitters are connected to outputs of the device (13) and (14). The first (18) and second (19) additional transistors are introduced into the scheme; their bases are connected to the auxiliary power supply source (20), emitter of the first (18) additional transistor is connected to the emitter of the first (6) matching transistor, emitter of the second (19) additional transistor is connected to the emitter of the second (7) matching resistor and united bases of the first (6) and second (7) matching resistor are connected to the first (13) output of the device through the first (21) additional resistor and to the second (14) output of the device through the second (22) additional resistor.

EFFECT: expanding the permitted range for transistance variation of transresistive amplifiers.

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